采用射频等离子增强化学气相沉积(RF-PECVD)技术,在较高的射频功率和沉积气压条件下,通过改变硅烷浓度和衬底温度等参数,以Corning 7059玻璃为衬底制备微晶硅薄膜材料。通过拉曼光谱和光暗电导的测试等方法对薄膜特性进行了表征,研究了沉积参数对微晶硅薄膜材料的微结构以及光电特性的影响,并讨论了它们的相关性。解释了结构与光电特性的变化规律,以表面扩散的机理讨论了结晶过程。实验表明,硅烷浓度和衬底温度这两个参数对于微晶硅薄膜材料的微结构及其光电特性具有重要影响,而且参数之间存在匹配关系。
The microcrystalline Si(f-Lc-Si)thin films were synthesized by RF plasma enhanced chemical vapor deposition on substrate of 7059 Corning glass. The impacts of the deposition conditions, such as the silane concentration, substrate temperatrue, pressure, and plasma power, on the microstrctures and opto-electrical properties were evaluated. The films were characterized with Raman spectroscopy and scanning electron microscopy and conventional surface probes. The results show that the SiH4 concentration and substrate temperature had a major impact on the Si (f-Lc-Si) films, and that the influence of the synthesis conditions was correlated. For example, the deposition rate markedly increased with an increase of the SiH4 concentration and affected surface diffusion; and as the substrate temperature increased, the surface diffusion, surface reactivity, and dark conductivity increased. but its photosensitiveity decreased. Possible mechanisms were tentatively discussed.