中文摘要：

本文以InCls。4H2O和SnCl4·5H2O为前驱物，利用溶胶-凝胶法在玻璃载片上旋转涂膜制备掺锡氧化铟透明导电薄膜（ITO薄膜）。采用了紫外-可见光分光光度计、四探针测试仪、x-射线衍射仪和扫描电镜等对ITO薄膜的透射率、方块电阻、物相组分和结构形貌进行测量与表征。研究了掺锡浓度对ITO薄膜的光电特性的影响。实验结果显示：ITO薄膜的光电特性与掺锡浓度有关，在掺杂溶度为12wt%时，制备出的ITO薄膜最低方块电阻为124，最高透射率为92．85％。

英文摘要：

The Sn doped In20a thin films were prepared on the glass substrates by sol-gel and rotating film method with InC13 . 4H20 and SnC14 . 5H20 as precursors. The transmission, square resistance, components and morphology of ITO film were measured and characterized respectively with UV-Vis spectrophotometer, the four-probe resistance tester, X-ray diffraction and scanning electron microscopy. The effects of doped Sn concentration on the optical and electrical properties of ITO thin films were researched. The experimental results show that the square resistance and the transmission of ITO film are related to doped Sn concentration, when the doped Sn concentration is 12wt%,the lowest square resistance of ITO thin film is , the highest transmission rate is 92.85%.