中文摘要：

采用射频等离子增强化学气相沉积（RF．PECVD）技术在低温、高沉积压力的条件下制备微晶硅薄膜材料。在优化其它沉积参数的条件下，研究等离子功率密度对微晶硅薄膜材料微结构的影响。通过x射线衍射谱，拉曼光谱，红外吸收谱以及SEN来表征了微晶硅薄膜材料的微结构。结果显示：随着射频功率的增加，微晶硅薄膜的晶化率提高，晶粒尺度减小，薄膜呈小晶粒生长，薄膜中氢含量减少，微结构因子增加，薄膜生长表现出不均匀性。

英文摘要：

Hydrogenated microcrystalline silicon（ p.c-Si： H） films were prepared by the radio frequency plasma enhanced chemical vapor deposition （RF-PECVD） under conditions of a low temperature （200 % ） and a high deposition pressure. As the others parameters of deposition optimized, the influences of plasma power density on the microstructure of microcrystalline silicon thin films were studied. The microstructure of the microcrystalline silicon films materials were characterized by the X-ray diffraction, the Raman spectra, the FTIR spectra and scanning electron microscopy. The results indicated that as the crystalline volume fraction increasing, the grain sizes of microcrystalline silicon decreased, the growth of film was in a small size, and the content of hydrogen in all the films also decreased, while the microstructure factor increased with the radio frequency increasing. The growth of the film exhibits nonuniform.