中文摘要：

多孔低介电常数的介质引入硅半导体器件给传统的化学机械抛光（CMP）技术带来了巨大的挑战，低k介质的脆弱性难以承受传统CMP技术所施加的机械力。一种结合了电化学和机械平坦化技术的新颖铜平坦化工艺——电化学机械抛光（ECMP）应运而生，ECMP在很低的压力下实现了对铜的平坦化，解决了多孔低介电常数介质的平坦化问题，被誉为未来半导体平坦化技术的发展趋势之一。主要综述了电化学机械抛光技术的产生、原理、研究进展和展望，对铜的ECMP技术进行了回顾和讨论。

英文摘要：

The introduction of porous, low-k dielectric materials into Si-based semiconductor devices provides substantial challenges for CMP. These challenges arise primarily from the mechanical fragility of such dielectrics, which may not withstand the force applied during CMP. A novel planarization process, electrochemical mechanical planarization （ ECMP）, comes into being which integrating electrochemical mechanical polishing that allows achieving global planarization for Cu interconnection at a much reduced pressure and solves the problem. ECMP becomes one of the trends in the field of semiconductor planarization technology. The development, principle, research development and prospect of ECMP are summarized and the ECMP for Cu is herein reviewed and discussed.