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Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD
  • 期刊名称:Optoelectronics Letters
  • 时间:0
  • 页码:0085-0087
  • 语言:英文
  • 分类:TN304.055[电子电信—物理电子学] O484[理学—固体物理;理学—物理]
  • 作者机构:[1]Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
  • 相关基金:This work has been supported by the National Natural Science Foundation of China (No.60806030), Tianjin Natural Science Foundation (Nos. 08JCYBJC14600 and 10SYSYJC27700), and Tianjin Science and Technology Developmental Funds of Universities and Colleges (No. ZD200709).
  • 相关项目:极大规模集成电路碳纳米管互连基础及关键工艺研究
中文摘要:

高密度的碳 nanotubes (CNT ) 被收音机频率血浆在乙炔和氢气体的混合在 Fe/Si 底层上综合提高的化学蒸汽免职(RF-PECVD ) 方法。CNT 的生长上的底层温度的效果被扫描电子显微镜学(SEM ) 学习,传播电子显微镜学(TEM ) 和拉曼光谱学。当横梁密度被增加时, CNT 的质量被增加底层温度更加改进并且 graphitization 度(我 D/I G ) 被提高。最好排列的 CNT 在 750 楷桴被准备吗?

英文摘要:

The high-density carbon nanotubes (CNTs) are synthesized on Fe/Si substrate in the mixture of acetylene and hydrogen gas by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The effects of substrate temperature on the growth of CNTs are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The quality of CNTs is improved considerably by increasing the substrate temperature while the beam density is increased and graphitization degree (ID/IG) is enhanced. The best aligned CNTs are prepared at 750 ℃, the beam density is about 1.6 - 103/gm^2, and ID/IG is about 0.93. Temperature influence is also discussed.

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