中文摘要：

采用射频磁控溅射法沉积制备了（002）ZnO／Al／Si复合结构。研究了Al薄膜对（002）ZnO／Al／Si复合结构的声表面波器件（SAWD）基片性能影响以及当ZnO薄膜厚度一定时的Al膜最佳厚度。采用X射线衍射（XRD）对Al和ZnO薄膜进行了结构表征，采用扫描电镜（SEM）对ZnO薄膜进行表面形貌表征，并从薄膜生长机理角度进行了分析。结果表明，加Al薄膜有利于ZnO薄膜按（002）择优取向生长，并且ZnO薄膜的结晶性能提高；与（002）ZnO／Si结构基片相比，当A1薄膜厚为190nm时，（002）ZnO／A1／Si结构中ZnO薄膜的机电耦合系数提高了65％。

英文摘要：

The effects of Al thin film on the properties of ZnO thin film in （002）ZnO/Al/（100）Si composite structure and the optimum thickness of Al thin film when the thickness of ZnO thin film is fixed are discussed by RF magnetron sputtering. The structure of ZnO films is investigated by X-ray diffraction （XRD） spectra. The surface morphology and piezoelectric properties of ZnO films are characterized by scanning electron microscope （SEM）. Meanwhile, the ZnO films are analyzed from a perspective of film growth mechanization. The results show that （002）preferred orientation of ZnO thin films in （002） ZnO/Al/（100） Si composite structure and the crystallization property are enhanced obviously compared with the （002）ZnO/Si structure. When the thickness of aluminum is 100 nm,the electromechanical coupling coefficient of ZnO thin films in （002）ZnO/Al/（100）Si composite structure is 65 G larger than that in the （002）ZnO/Si structure. The conclusion establishes base for studying the ZnO/Al/diamond/Si composite structure and will be of great importance in developing new high-frequency surface acoustic wave （SAW） devices.