中文摘要：

为高周波的表面的硼氮化物(BN ) 电影声学的波浪(锯) 设备被无线电在 Ti/Al/Si (111 ) 晶片上扔频率(RF ) 磁控管劈啪作响。BN 电影的结构被 Fourier 变换调查红外线(FTIR ) 光谱学和 X 光检查衍射(XRD ) 系列，和表面形态学和 BN 电影的压电的性质被原子力量显微镜学(AFM ) 描绘。结果证明当氮和氩的流动比率是 2:18 时，立方的 BN ( c-BN )电影与高纯净和c轴取向被扔，并且当氮和氩的流动比率是 4:20 时，六角形的 BN ( h-BN )电影与高c轴取向被扔。粒子一致、紧缩，并且粗糙分别地是 1.5 nm 和 2.29 nm。h-BN 电影比 c-BN 电影有更好压电的反应和分发。

英文摘要：

Boron nitride （BN） films for high-frequency surface acoustic wave （SAW） devices are deposited on Ti/AI/Si（111） wafers by radio frequency （RF） magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared （FrlR） spectroscopy and X-ray diffraction （XRD） spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy （AFM）. The results show that when the flow ratio of nitrogen and argon is 2：18, the cubic BN （c-BN） film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4：20, the hexagonal BN （h-BN） film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribu- tion than the c-BN films.