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A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：306-308
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Y Lv|B Gao|Y. H. Fu|B. Chen|L.F. Liu|X. Y. Liu|J. F. Kang|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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