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Engineering oxide resistive switching materials for memristive device application
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processi
  • 时间：0
  • 页码：991-996
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Liu, Lifeng|Chen, Bing|Gao, Bin|Zhang, Feifei|Chen, Yuansha|Liu, Xiaoyan|Wang, Yi|Han, Ruqi|Kang, Jinfeng|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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