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Unipolar resistive switching and mechanism in Gd-doped-TiO(2)-based resistive switching memory devic
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：115009-115009
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Liu, L. F.|Chen, Y. S.|Kang, J. F.|Wang, Y.|Han, D. D.|Liu, X. Y.|Zhang, X.|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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