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900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2014.6
  • 页码：2035-2040
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Hao, Yilong|Wu, Wengang|Chen, Kevin J.|Shen, Bo|
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硅基GaN功率开关器件阻断特性的研究
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