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High-Performance Normally-Off MOSFET Using a Wet Etching-Based Gate Recess Technique
  • ISSN号：0741-3106
  • 期刊名称：Electron Device Letters, IEEE
  • 时间：2013
  • 页码：1370-1372
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Yilong Hao|Wengang Wu|Chen, K.J.|Bo Shen|
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