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High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2013.11
  • 页码：1370-1372
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Hao, Yilong|Wu, Wengang|Chen, Kevin J.|Shen, Bo|
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硅基GaN功率开关器件阻断特性的研究
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High-Performance Normally-Off MOSFET Using a Wet Etching-Based Gate Recess Technique