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Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxida
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2015.8.1
  • 页码：757-759
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Wu, Wengang|Huang, Sen|Chen, Kevin J.|Shen, Bo|
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硅基GaN功率开关器件阻断特性的研究
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