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Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transist
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2014.11
  • 页码：1094-1096
  • 相关项目：硅基GaN功率开关器件阻断特性的研究
作者： Wang, Jinyan|Hao, Yilong|Wu, Wengang|Shen, Bo|
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硅基GaN功率开关器件阻断特性的研究
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