采用喷墨打印的方法对衬底进行图形化,结合链取向技术,实现聚合物混合体poly(9,9-dioctylfluoreneco-benzothiadiazole)(F8BT,主体)和red F(客体)在指定区域链取向.利用链取向区域内外的折射率差异,设计出了各种宽度的薄膜光波导,使光信号在链取向区域传播.同时,这一共混体系中主体的荧光光谱与客体的吸收光谱区域重叠,可以使有效的能量传递发生,利用主体向客体的能量传递机理,使链取向处理后的聚合物混合体实现了红光发射.
Semiconducting conjugated polymersused for light emitting devices(LEDs), lasers and amplifiers have received considerable attention due to their low cost and easy fabrication through spin-coating and photochemical processing. A promising material for LED and laser applications is poly(9, 9-dioctylfluorene-co-benzothiadiazole)(F8BT). F8BT has a low stimulated emission threshold and exhibits a large net optical gain at 570 nm. It also shows liquid crystallinity and can be readily aligned into a monodomain by using an alignment layer, polyimide(PI). Oriented film of F8BT exhibits that its charge carrier mobility is increased by more than one order of magnitude compared with isotropic film. The refractive index of the material is also greatly affected by the orientation of the polymer chain. Furthermore, it has been reported that low threshold laser can be achieved by blending P3HT or red-F solution into F8BT via energy transfer.Here we report a planar waveguide structure obtained via patterning chain oriented area on F8BT : red-F(9 : 1)blend polymer film. The blend solution is obtained by mixing the F8BT solution with red-F solution(with the same concentration, 20 mg/m L in toluene) with a ratio of 9 : 1. The designed waveguide patterns are obtained by inkjetprinting the PI solution onto the pre-cleaned quartz substrates. Thin films(150–200 nm thick) of F8BT : red F are deposited onto PI by spin coating(2000 rpm). The chain alignment treatment is performed by the following procedure:the films are kept in N_2 at 265℃ for 2 min, then they are cooled down to 235℃ at a rate of 1℃ / min, finally they are cooled down to room temperature sharply. The PI contacted area on the film becomes anisotropic, while the area without PI keeps isotropic. The refractive index parallel(perpendicular) to the chain direction is significantly increased(reduced) in the PI contacted area compared with outside the PI area. Therefore, the waveguide confinement could be achieved without