中文摘要：

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes(UV OLEDs) using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer(EML) and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.

英文摘要：

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes（UV OLEDs） using different heterojunction structures.It is found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exciplex formation.The electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances efficiency.The change in EML thickness generates tunable UV emission from 376 nm to 406 nm.In addition,the UV emission excites low-energy organic function layers and produces photoluminescent emission.In UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.