Strain-induced direct-indirect bandgap transition and phonon modulation in monolayer WS2
ISSN号:1000-3304
期刊名称:《高分子学报》
时间:0
分类:O484.41[理学—固体物理;理学—物理] TG335[金属学及工艺—金属压力加工]
作者机构:[1]Nanyang Technological University-Nanjing Tech Center of Research and Development, Nanjing Tech University, Nanjing 211816, China, [2]Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore, [3]Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China, [4]Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China, [5]Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University ot Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210046, China
相关基金:This work is supported by the Singapore National Research Foundation NRF RF Award No. NRFRF2010- 07, MOE Tier 2 MOE2012-T2-2-049, A'Star SERC PSF grant No. 1321202101, and MOE Tier 1 MOE2013- T1-2-235. W. Huang acknowledges the support of the National Basic Research Program of China (973 Program) (No. 2015CB932200), the National Natural Science Foundation of China (NSFC) (Grant Nos. 21144004, 20974046, 21101095, 21003076, 20774043, 51173081, 50428303, 61136003, and 50428303), the Ministry of Education of China (No. IRT1148), the NSF of Jiangsu Province (Grant Nos. SBK201122680, 11KJB510017, BK2008053, 11KJB510017, BK2009025, 10KJB510013, and BZ2010043), and NUPT (Nos. NY210030 and NY211022). J. R Wang is grateful for the NSFC (No. 11474164), NSF of Jiangsu province (No. BK20131413), and the Jiangsu Specially-Appointed Professor program. Y. L. Wang thanks Luqing Wang, Dr. Xiaolong Zou, and Dr. Alex Kutana for the constructive discussion.