中文摘要：

利用射频磁控溅射,在硅和石英基底上制备了厚度为150 nm的TiO2薄膜。利用X射线衍射仪（XRD）、X射线光电子能谱仪（XPS）、紫外可见分光光度计（UV-vis）和光致发光谱（PL）等多种测试分析技术,研究退火温度对TiO2薄膜结构、组分及光学性能的影响。研究结果表明,未退火薄膜为无定型结构;随着退火温度的升高薄膜的金红石相含量逐渐增加,并沿（110）晶面择优取向。能隙也由退火前的3.03 eV逐渐增加到900℃退火后的3.18eV。对于TiO2薄膜催化活性最优的退火温度应为800℃。

英文摘要：

TiO2 thin films of 150 nm thickness were deposited on the Si substrates and quartz substrates by RF magnetron sputtering technique. The structural, compositional and optical properties of the films were studied by X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, UV-visible spectroscopy （ UV-vis. ） and photoluminescence spectra （PL）. The results were discussed with respect to the effect of annealing temperature on properties of the films. Before annealing treatment the films have an amorphous phase, but after annealing treatment the content of rutile phase TiO2 increase gradually and have an obvious （110） preferred orientation with annealing temperature increasing. The band gap of films increase gradually from 3.03 eV before annealing treatment to 3.18 eV annealed at 900℃. The most optimum annealing temperature for photocatalytic activity of TiO2 thin films may be 800℃.