中文摘要：

研究退火温度对薄膜相结构、表面化学组成及形貌的影响。采用射频磁控溅射法在单晶硅片上淀积TiO2薄膜，通过X射线衍射（XRD）、原子力显微镜（AFM）和X光电子能谱（XPS）对其进行表征。结果表明，室温制备400℃以下退火的TiO2薄膜为无定形结构，400℃以上退火的TiO2薄膜出现锐钛矿相，600℃以上退火的TiO2薄膜开始出现金红石相，退火温度在1000℃以上时样品已经完全转变为金红石相；随着退火温度的升高，晶粒尺寸和表面粗糙度逐渐增大，但是当退火温度为1000℃时反而有所减小，晶粒尺寸和表面粗糙度在退火温度为1000℃时发生的这一突变现象，是由该退火温度下的相变导致。

英文摘要：

Surface morphology of TiO2 films, grown by RF magnetron sputtering on Si substrate and annealed at different temperatures,were characterized with X-ray diffraetion（XRD）, atomic force microscopy（AFM） and X-ray photoelectron spectroscopy（XPS）. The results show that the annealing temperature significantly affects its microstructures. For instance, annealed below 400 ℃, the film is amorphous; however, at annealing temperatures of 400 ℃ or 600 ℃, anatase and rutile comes into being, respectively. At an annealing temperature higher than 1000 ℃, anatase phase turns into rutile phase completely. As annealing temperature rises up from 400 ℃ to 1000 ℃, the grain size grows and the surface roughens,but tuming around at 1000 ℃ abruptly,possibly because of the phase transition.