中文摘要：

研究了V2O5掺杂对Zn O–Pr6O11基压敏电阻微观结构、电性能的影响。研究表明：随着V2O5掺杂量的增加,击穿场强（E1m A）从1 068 V/mm增加到1 099 V/mm,后又减小到937 V/mm。当V2O掺杂量（摩尔分数）为1.0%时,击穿场强达到最高,阻抗最大,相对介电常数er出现最大值,损耗角正切值tanδ达到最小;当V2O5掺杂量（摩尔分数）为1.5%时,非线性系数（α）达到最大（47.7）,漏电流（JL）降到最小（0.74μA/cm2）。V2O5的存在对压敏电阻的性能有显著影响,呈现出优越的性能,特别是击穿电压很高,在电气设备的抗雷击方面具有应用潜能。

英文摘要：

The microstructure and electrical properties of V2O5-doped ZnO-Pr6O11 ceramics were investigated. As the amount of V2O5 increases, the breakdown field firstly increases from 1 068 to 1 099 V/mm, and then decreases to 937 V/mm. The varistor ceramics doped with the amount V2O5 of 1.0% （mole fraction） exhibit the optimum breakdown field, impedance and relative dielectric constant, as well as the minimum loss tangent value （tang）. The varistor ceramics doped with the of V2O5 amount of 1.5% show the optimum nonlinear coefficient （α） of 47.7, and the least leakage current （JL） of 0.74 μA/cm2. The results indicate that V2O5 doping has a dominant effect on the performance, the ceramics presents the superior performance, especially at the high breakdown voltage. The ceramics have a promising application potential in the electrical equipment resistant to lightning.