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中文摘要：
以四氯化钛为前驱体,以ZnCl2为锌源,采用溶胶-凝胶法在纯钛基体上制备了Zn掺杂纳米TiO2薄膜（Zn-TiO2）,研究了温度对Zn掺杂纳米TiO2薄膜在0.2mol/L Na2SO4中的光电化学性能的影响。根据Mott-Shottky曲线可知,Zn-TiO2薄膜为n型半导体;经过300℃热处理的Zn-TiO2薄膜,导带位置最高,空间电荷层宽度W最大。从电化学阻抗谱得到,光照下300℃热处理的Zn-TiO2薄膜电阻较暗态下降低最多。通过线性伏安曲线发现,300℃热处理的Zn-TiO2薄膜具有最强的光电流。
英文摘要：
Zn-doped TiO2 thin films on titanium substrates were prepared by sol-gel method with titanium tetra- chloride as the precursor and ZnCle as a source of zinc. The heat-treatment temperature dependence of the pho- toelectrochemical performance in 0. 2mol/L NaeSO4 of the Zn-doped TiO2 film was investigated by the tech- niques of Mott-Shottky relation, electrochemical impedance spectroscopy, and linear sweep voltammetry. The results from Mott Shottky curves show that the obtained films all were N type semiconductor, and the film at 30℃ has the highest position of conduction band and the widest space charge layer. The EIS resistance of the 300℃ film decreases most from the state of illumination to the dark. The strongest light current occurs in Zn- doped TiO2 film at 300℃ from LSV curves.
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