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Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
ISSN号:1674-1056
期刊名称:Chinese Physics B
时间:2013.10
页码:-
相关项目:基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
作者:
Zhang Li|Guo Qing|Wang Tao|Sheng Kuang|
同期刊论文项目
基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
期刊论文 25
会议论文 6
同项目期刊论文
Investigation of electrically induced migration of copper on graphene surfaces: Theory and experimen
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The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO(2) with H(2)O Molecule Adsorption
Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study
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Optimization of Bosch etch process for vertically stacked Si nanowires
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Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of G
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Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping
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期刊信息
《中国物理B:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国物理学会和中国科学院物理研究所
主编:欧阳钟灿
地址:北京 中关村 中国科学院物理研究所内
邮编:100080
邮箱:
电话:010-82649026 82649519
国际标准刊号:ISSN:1674-1056
国内统一刊号:ISSN:11-5639/O4
邮发代号:
获奖情况:
国内外数据库收录:
被引量:406