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Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS
  • 期刊名称：Chin. Phys. B
  • 时间：2012.6.1
  • 页码：068502-068505
  • 分类：O641.121[理学—物理化学;理学—化学] TQ051.893[化学工程]
  • 作者机构：[1]College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China, [2]Second Affiliated Hospital, Zheiiang University College of Medicine, Zhejiang University, Hangzhou 310007, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 61176101）, the ＂Zijing Program Foundation＂ of Zhejiang University, and the Natural Science Foundation of Zhejiang Province for Oversea Returners.
  • 相关项目：基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
作者： 汪涛|
关键词： 外加电场, 密度泛函理论, 薄片, 石墨, Β-乳球蛋白, 原子电荷, BLG, 从头计算, graphene, bandgap, density functional theory study
中文摘要：

Corresponding author. E-mail： liuyan2010@zju.edu.cn Corresponding author. E-mail： shengk@zju.edu.cn

同期刊论文项目
基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
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