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AA bilayer graphene on Si-terminated SiO2 under electric field

ISSN号：1674-1056
期刊名称：Chinese Physics B
时间：2014.2
页码：-
分类：TQ330.68[化学工程—橡胶工业] TQ127.2[化学工程—无机化工]
作者机构：[1]Department of Radiology, Zhejiang Province Tongde Hospital, Zhejiang Province, Hangzhou 310012, China, [2]Department of Radiology, Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 312000, China, [3]College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China, [4]School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia
相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 61176101）, the Ph.D. Programs Foundation of the Ministry of Education of China （Grant No. 20120101120156）, and the Fundamental Research Funds for the Central Universities, China （Grant No. 2012FZA4016）.
相关项目：基于硅基一维纳米线的Gate-all-around纳米晶体管的研究

作者： Liu Hai-Long|Liu Yan|Wang Tao|Ao Zhi-Min|

关键词：电场作用, 二氧化硅, 石墨, 硅(001), 第一原理, 垂直移动, SIO, 堆叠, interface, graphene, oxide

中文摘要：

The AA-stacked bilayer graphene/α-SiO2(001)interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles.AA-stacked bilayer graphene is slightly mis-oriented on SiO2substrate without electric field and the band gap is 0.557 eV.However,as F increases,the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and,finally,transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.

英文摘要：

The AA-stacked bilayer graphene/α-SiO2 （001） interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.

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