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Transformation from AA to AB-Stacked Bilayer Graphene on alpha-SiO(2) under an Electric Field
ISSN号:0256-307X
期刊名称:Chinese Physics Letters
时间:2011.8
页码:087303-087303
相关项目:基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
作者:
Wang Tao|Wang Wen-Bo|Sheng Kuang|Yu Bin|
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基于硅基一维纳米线的Gate-all-around纳米晶体管的研究
期刊论文 25
会议论文 6
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Investigation of electrically induced migration of copper on graphene surfaces: Theory and experimen
The Tunable Bandgap of AB-Stacked Bilayer Graphene on SiO(2) with H(2)O Molecule Adsorption
Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study
AA bilayer graphene on Si-terminated SiO2 under electric field
An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient
Improvement of Ni Silicide Thermal Stability By Using Vanadium Elements
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
Electric field induced hydrogenation of silicene
Fabrication of vertically stacked single-crystalline Si nanowires using self-limiting oxidation
Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS
A comparative investigation of an AB- and AA-stacked bilayer graphene sheet under an applied electri
Optimization of Bosch etch process for vertically stacked Si nanowires
Band gap engineering of early transition-metal-doped anatase TiO2: first principles calculations
Bandgap engineering of monolayer MoS2 under strain: A DFT study
Transformation from AA to AB-Stacked Bilayer Graphene on alpha-SiO2 under an Electric Field
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of G
Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer
Topological Properties of Atomic Lead Film with Honeycomb Structure
Photonic, and photocatalytic behavior of TiO2 mediated by Fe, CO, Ni, N doping and co-doping
The effect of h-BN buffer layers in bilayer graphene on Co (111)
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期刊信息
《中国物理快报:英文版》
中国科技核心期刊
主管单位:中国科学院
主办单位:中国科学院物理研究所、中国物理学会
主编:
地址:北京中关村中国科学院物理研究所内(北京603信箱《中国物理快报》编辑部)
邮编:100080
邮箱:cpl@aphy.iphy.ac.cn
电话:010-82649490 82649024
国际标准刊号:ISSN:0256-307X
国内统一刊号:ISSN:11-1959/O4
邮发代号:
获奖情况:
中国期刊方阵“双高”期刊
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美国化学文摘(网络版),美国数学评论(网络版),荷兰文摘与引文数据库,美国剑桥科学文摘,美国科学引文索引(扩展库),英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,英国英国皇家化学学会文摘
被引量:190