半“V”字形铁电液晶器件中使用N^*-SmC^*相序的铁电液晶材料,获得此种器件单畴排列的常用方法是在N^*-SmC^*相变过程中施加直流电压,但是这种方法引入了损害器件性能的剩余电荷。通过研究在相变过程中施加各种非直流电压对液晶排列织构的影响,发现直流电压不是得到N^*-SmC^*相序的铁电液晶均一排列的必要条件,通过选择双极性电压为V1=7V/um,V2=-3V/um,一个脉冲周期20ms内施加双极性电场时间比为D1/D2=3/7,不仅获得了电光特性曲线不存在迟滞回线的均一层排列器件,同时也解决了剩余电荷对器件的影响。
In half-V-shaped switching ferroelectric liquid crystal devices(Half-V-FLCDs), ferroelectric liquid crystal materials with N^* -SmC^* phase transition are used. A DC voltage is often applied to the liquid crystal during the phase transition to select single domain texture. But the use of DC voltage introduces residual charge which damages the properties of the device. By studying the influence of various waveforms of non-DC voltage on the alignment of ferroelectric liquid crystal devices, it was found the use of DC voltage is not necessary for selecting single domain. The problem of residual charge which is produced in the process of inducing alignment by DC electric field was solved through bipolar pulse inducing alignment, and a uniform alignment ferroelectric liquid crystal with no hysteresis loop electrooptic curve is obtained. The bipolar pulse consists of third part 7 V/um and seven part -3 V/um during the period of 20 ms.