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Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：2014.9.1
  • 页码：661-664
  • 相关项目：F注入增强型AlGaN/GaN HEMT器件在电、热应力下的退化机理研究
作者： JunShuai Xue|JinCheng Zhang|Yue Hao|
同期刊论文项目
F注入增强型AlGaN/GaN HEMT器件在电、热应力下的退化机理研究
期刊论文 32
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Effects of growth temperature on structural and electrical properties of InAlN/GaN heterostructures
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using
AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO
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超深亚微米PMOSFETs的热载流子退化及新的寿命预测模型
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Electron Trap Energy Distribution in HfO2 by the Discharge-Based Pulse I-V Technique
Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管
Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
功率MOSFET的负偏置温度不稳定性效应中的平衡现象
大功率P沟道VDMOS器件设计与工艺仿真
Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs
A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors
深刻蚀方法对硅基SIWF通孔显微结构的影响
一种新型P沟道VDMOS复合耐压终端
一种P沟VDMOS器件的研究与实现
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique
Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET
Mechanism of improving forward and reverse blocking voltages in AIGaN/GaN HEMTs by using Schottky drain
Resistive switching characteristics of Ti/ZrO2/Pt RRAM device
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress