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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky dr
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2014.10
  • 页码：-
  • 相关项目：F注入增强型AlGaN/GaN HEMT器件在电、热应力下的退化机理研究
作者： Zhao Sheng-Lei|Mi Min-Han|Hou Bin|Luo Jun|Wang Yi|Dai Yang|Zhang Jin-Cheng|Ma Xiao-Hua|Hao Yue|
同期刊论文项目
F注入增强型AlGaN/GaN HEMT器件在电、热应力下的退化机理研究
期刊论文 32
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transisto
Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET
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Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility
Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using
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超深亚微米PMOSFETs的热载流子退化及新的寿命预测模型
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs
AlGaN/GaN双异质结F注入增强型高电子迁移率晶体管
Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
Breakdown voltage and current collapse of F-plasma treated AIGaN/GaN HEMTs
A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors
深刻蚀方法对硅基SIWF通孔显微结构的影响
一种新型P沟道VDMOS复合耐压终端
一种P沟VDMOS器件的研究与实现
Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique
Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET
Mechanism of improving forward and reverse blocking voltages in AIGaN/GaN HEMTs by using Schottky drain
Resistive switching characteristics of Ti/ZrO2/Pt RRAM device
Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
大功率P沟道VDMOS器件设计与工艺仿真
功率MOSFET的负偏置温度不稳定性效应中的平衡现象
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406