中文摘要：

The effect of the static negative bias temperature(NBT) stress on a p-channel power metal–oxide–semiconductor field-effect transistor(MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability(NBTI) degradation has the trend predicted by the reaction–diffusion(R–D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R–D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

英文摘要：

The effect of the static negative bias temperature （NBT） stress on a p-channel power metal-oxide-semiconductor field-effect transistor （MOSFET） is investigated by experiment and simulation. The time evolution of the negative bias temperature instability （NBTI） degradation has the trend predicted by the reaction-diffusion （R-D） model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.