位置：成果数据库 > 期刊 > 期刊详情页
Analytical Solution of Subthreshold Channel Potential of Gate Underlap Cylindrical Gate-All-Around M
  • 期刊名称：Solid-State Electronics
  • 时间：0
  • 页码：806-808
  • 语言：英文
  • 相关项目：双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
作者： Mansun Chan|Jin He|Lining Zhang|Chenyue Ma|Xinnan Lin|
同期刊论文项目
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
同项目期刊论文
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core-Shell Structure
A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulat
An oxide/silicon core/shell nanowire MOSFET
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
A Predictive Modeling for NBTI of Silicon Nanowire Device
Generic compact model of double-gate MOSFETs applicable to different operation modes and channels
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFE
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric doubl
Charge-based model enhancement for undoped surrounding-gate MOSFETs
A carrier-based analytic drain current model incorporating velocity saturation for undoped surroundi
A charge-based compact model for predicting the current-voltage and capacitance-voltage characterist
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with conti
A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current&nda
A continuous, analytic channel potential solution to doped symmetric double-gate MOSFETs from the ac
An improvement to the computational efficiency of the drain current model for double-gate MOSFET
Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs t
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system