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A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current&nda
  • 期刊名称：J. Comput. Theor. Nanosci.
  • 时间：0
  • 页码：1732-1738
  • 语言：英文
  • 相关项目：双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
作者： Wen Wu|Jian Zhang|Xukai Zhang|Hao Zhuang|Lining Zhang|Jin He|Zhiwei Liu|Yong Ma|Min Shi|Wenping Wang|
同期刊论文项目
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
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