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An improvement to the computational efficiency of the drain current model for double-gate MOSFET
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：097304-1-097304-4
  • 语言：英文
  • 相关项目：双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
作者： Wu Wen|Zhang Lining|Zhou Xingye|Zhang Xing|Ma Chenyue|Zhou Zhize|Zhang Jian|Zhao Wei|
同期刊论文项目
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
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