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Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：O175[理学—数学;理学—基础数学] TN386.1[电子电信—物理电子学]
  • 作者机构：[1]Department of Electronics and Computer Engineering,Hong Kong University of Science & Technology,Hong Kong,China, [2]Micro & Nano Electric Device and Integrated Technology Group,Key Laboratory of Integrated Microsystems,Peking University, Shenzhen Graduate School,Shenzhen 518055,China
  • 相关基金：Project supported by the National Natural Science Foundation of China（No.60876027）; the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR China（No.HKUST6289/04E）; the Industry Education and Academy Cooperation Program of Guangdong Province China（No.2009B090300318）; the Fundamental Research Project of Shenzhen Science ＆ Technology Foundation China（No.JC200903160353A）.
作者： 何进, 郑睿, 张立宁, 张健, 林信南, 陈文新
关键词： MOSFET, 表面电位, 电压方程, 解析解, 积累, 解方程, 泊松方程, 原始方程, non-classical CMOS, surrounding-gate MOSFETs, device physics, surface potential, accuracy, continuity issue
中文摘要：

Corresponding author. Email： eejinhe@ust.hk

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754