位置：成果数据库 > 期刊 > 期刊详情页
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN386[电子电信—物理电子学]
  • 作者机构：[1]The Key Laboratory of httegrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China, [2]TSRC and ULTRAS Team, EECS, Peking University, Beijing 100871, China, [3]Department of Electronics and Computer Engineering, Hong Kong University of Science & Technology Hong Kong, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （No. 60876027）, a Competitive Earmarked Grant from the Research Grant Council of Hong Kong SAR （No. HKUST6289/04E）, and the International Joint Research Program from Japan （No. NEDOO5/O6.EGO1 ）.
作者： 何进, 张健, 张立宁, 马晨月, 陈文薪
关键词： 金属氧化物半导体管, 场效应晶体管, MOSFET, 半导体技术, non-classical MOS transistor, surrounding-gate MOSFETs, device physics, surface potential model non-charge-sheet approximation
中文摘要：

Corresponding author. Email： frankhe@pku.edu.cn

同期刊论文项目
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
同项目期刊论文
A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
Study on Transport Characteristics of Silicon-Germanium Nanowire MOSFETs with Core-Shell Structure
A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulat
Analytical Solution of Subthreshold Channel Potential of Gate Underlap Cylindrical Gate-All-Around M
An oxide/silicon core/shell nanowire MOSFET
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
A Predictive Modeling for NBTI of Silicon Nanowire Device
Generic compact model of double-gate MOSFETs applicable to different operation modes and channels
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFE
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric doubl
Charge-based model enhancement for undoped surrounding-gate MOSFETs
A carrier-based analytic drain current model incorporating velocity saturation for undoped surroundi
A charge-based compact model for predicting the current-voltage and capacitance-voltage characterist
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with conti
A Physics Based Yet Computation Efficient Core Model for Undoped Surrounding-Gate MOSFET Current&nda
A continuous, analytic channel potential solution to doped symmetric double-gate MOSFETs from the ac
An improvement to the computational efficiency of the drain current model for double-gate MOSFET
Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs t
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region
An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor
One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754