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Charge-based model enhancement for undoped surrounding-gate MOSFETs
  • 期刊名称：Electronics Letters
  • 时间：0
  • 页码：569-570
  • 语言：英文
  • 相关项目：双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
作者： L. Zhang|J. He|
同期刊论文项目
双栅纳米FinFET的器件物理，模拟模型和电路设计技术研究
期刊论文 26 会议论文 17
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