中文摘要：

研究和探讨了预处理和温度影响对碳纳米管定向生长机制的作用。利用等离子体增强化学气相沉积（PECVD）的方法,以金属Fe薄膜为催化剂,在单晶硅衬底上定向生长碳纳米管（CNT）。通过给予不同的预处理时间和温度条件,在Fe/Si衬底上沉积出碳纳米管,通过扫描电子显微镜（SEM）进行表征,将不同的条件下生长的碳纳米管进行对比。结果表明,在适当的工艺条件下,可以生长出方向性好,纯度高的碳纳米管。

英文摘要：

In this paper,the effects of pretreatment and temperature on mechanism of direct growth of aligned carbon nanotubes were studied and discussed.Vertically aligned carbon nanotubes（CNT） were grown on the monocrystalline silicon by plasma enhanced chemical vapor deposition（PECVD）,and Fe thin film acts as catalyst.Given the conditions of different pretreatment time and temperature,carbon nanotubes are deposited on the Fe/Si substrate.After observed by the scanning electron microscope（SEM）,carbon nanotubes that are grown in different conditions are contrasted.The result shows that carbon nanotubes of better directivity and higher purity can be grown in a proper condition.