中文摘要：

通过热丝化学气相沉积（HFCVD）的方法,以钽（Ta）为衬底,三氧化二硼（Be2O3）为硼源,制备掺硼金刚石（BDD）薄膜。并采用共价键合法进一步制得壳聚糖修饰BDD薄膜电极。以此修饰电极为工作电极,在0.1mol/L,pH=4的磷酸氢二钠缓冲液中对Cu2＋进行检测。实验表明,Cu2＋在4.0×10-7～1.0×10-3 mol/L浓度范围内与峰电流成良好的线性关系,相关系数为0.9916,检测限达7.0×10-8 mol/L。比较了不同富集方式对Cu2＋的检测效果,并分别用未经修饰的BDD电极和经壳聚糖修饰的BDD电极对相同浓度的Cu2＋进行电化学检测,发现不仅还原峰电流明显增大而且还原峰电位也发生偏移,这表明经化学修饰的BDD电极能更加灵敏、准确地测定Cu2＋,同时也佐证了壳聚糖成功修饰在BDD电极上。

英文摘要：

With tantalum as substrate and diboron trioxide as boron source,boron-doped diamond thin-film was prepared by hot filament chemical vapor deposition technique.Chitosan was used to modify BDD thin-film electrode by the method of covalent-band reaction and used in the determination of Cu2＋ in the Na2HPO4 buffer solution（0.1mol/L,pH=4）.The results showed that a good linear range for Cu2＋ was from 4.0×10-7 to 1.0×10-3.The detection limit was 7.0×10-8mol/L and correlation coefficient was 0.9916.Comparing the test results of Cu2＋ by different enrichment mode.While use the unmodified electrode and chitosan modified electrode to detect the same concentration of copper ions,the reductive peak current increased and reductive potential changed.It showed that the chemically modified BDD thin-film electrode can detect Cu2＋ sensitively and accurately.Besides,it proved that chitosan had been modified successfully on BDD thin-film electrode.