中文摘要：

基于TOM直流I-V模型和Angelov非线性电容模型,该文建立了适合SiC MESFET的非线性模型,并利用符号定义器件（SDD）实现了在安捷伦ADS软件中嵌入,最终建立了SiC MESFET工艺的模型库。该非线性模型考虑了击穿特性、色散效应和自热效应等,可进行直流、散射S参数和谐波平衡等ADS软件中的仿真器。该模型在国内SiC MESFET工艺线上的验证结果表明模型具有较好的精度。

英文摘要：

The SiC MESFETs nonlinear characteristic is modeled by modified Triquint’s own model（TOM） DC I-V model and Angelov nonlinear capacitor models.The nonlinear model has been implemented in Agilent advanced design system（ADS） by using symbolic defined devices（SDD）,and an integral SiC MESFET process line design kit has been embedding in ADS.Its validity is verified by measured DC I-V curves,multi-bias S parameters and harmonic balance simulation based on native SiC MESFET process line,and good accuracy has been achieved.