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Accurate Modeling Of Minimum Noise Figure In AlGaN/GaN High Electron Mobility Transistors
  • ISSN号：0920-5071
  • 期刊名称：Journal of Electromagnetic Waves and Applications
  • 时间：0
  • 页码：819-832
  • 语言：英文
  • 相关项目：宽禁带半导体器件噪声机理与噪声模型研究
作者： 徐锐敏|
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