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Two ESD Detection Circuits for 3xVDD-Tolerant I/O Buffer in Low-Voltage CMOS Processes With Low Leak
  • ISSN号：1530-4388
  • 期刊名称：IEEE Transactions on Device and Materials Reliabil
  • 时间：2013.3.3
  • 页码：319-321
  • 相关项目：高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
作者： Liu, Hongxia|Yang, Zhaonian|Zhuo, Qingqing|
同期刊论文项目
高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
期刊论文 50 专利 1
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