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A novel co-design and evaluation methodology for ESD protection in RFIC
  • ISSN号：0026-2714
  • 期刊名称：Microelectronics Reliability
  • 时间：2012
  • 页码：2632-2639
  • 相关项目：高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
作者： Li, Li1|Liu, Hongxia1|Yang, Zhaonian1|Chen, Linlin1|
同期刊论文项目
高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
期刊论文 50 专利 1
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