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Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2012.1.1
  • 页码：013711-013711
  • 相关项目：高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
作者： Wang, S.L.1|Liu, H.X.1|Gao, B.1|Fan, J.B.1|Ma, F.1|Kuang, Q.W.1|
同期刊论文项目
高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
期刊论文 50 专利 1
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