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Low leakage 3xVDD-tolerant ESD detection circuit without deep N-well in a standard 90-nm low-voltage
  • ISSN号：1674-7321
  • 期刊名称：SCIENCE CHINA-TECHNOLOGICAL SCIENCES
  • 时间：2013.8.8
  • 页码：2046-2051
  • 相关项目：高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
作者： Yang ZhaoNian|Liu HongXia|Wang ShuLong|
同期刊论文项目
高k叠层栅AlGaN/GaN MOS-HEMT器件结构实现与可靠性表征
期刊论文 50 专利 1
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