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中文摘要：
研究了0.8μm SOINMOS晶体管,经过剂量率为50 rad （Si）/s的60Coγ射线辐照后的输出特性曲线的变化趋势.研究结果表明,经过制造工艺和版图的优化设计,在不同剂量条件下,该样品均不产生线性区kink效应.由碰撞电离引起的kink效应,出现显著变化的漏极电压随总剂量水平的提高不断增大.在高剂量辐照条件下,背栅ID-VSUB曲线中出现异常的“kink”现象,这是由辐照诱生的顶层硅膜/埋氧层之间的界面陷阱电荷导致的.
英文摘要：
The variations in ID-VD characteristic of 0.8 μm SOINMOS transistors are studied, which are exposed to 60Coγray at a dose rate of 50 rad （Si）/s. The results show that the linear kink effects of these samples at each dose level ane not presente due to the optimizations of manufacture process and layout design. The drain voltage that corresponds to the impact ionization induced kink effect, increases, with dose level. An anomalous“Kink”effect in the back gate ID-VSUB characteristics of the partially depleted SOINMOS transistors is observed at a high dose level, which is attributed to interface trap states generated at the buried oxide/silicon film interface during irradiation.
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