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中文摘要：
通过二维数值模拟, 深入分析了NMOSFET在不同漏极偏置、 不同栅长度和不同注入位置下的单粒子效应. 研究结果表明： 漏极偏置电压越高, 栅长度越短, 器件的单粒子瞬态电流越大, 收集电荷越多. 通过研究不同注入位置情况下的单粒子效应表明： 单粒子瞬态脉冲电流的大小和器件中该处对应的电场强度成比例变化. 研究结果为设计抗单粒子器件提供了重要指导.
英文摘要：
The single event effects in NMOSFET at different values of drain bias, gate length and striking location are thoroughly analyzed by two-dimensional numerical simulator in this paper. The results show that single event transient current increases with the increase of drain bias and with the decrease of gate length. Furthermore, single event transient current varies with the electric field at some places in the device. The present study provides important guidance on the devices design of mitigating the single event effects.
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