位置：成果数据库 > 期刊 > 期刊详情页
Ni/Si solid phase reaction studied by temperature-dependent current-voltage technique
  • 期刊名称：J. Appl. Phys
  • 时间：0
  • 页码：93(2), 866-870 (2003).
  • 语言：英文
  • 相关项目：多层薄膜固相反应与Co-Ni系硅化物薄膜外延及应用研究
作者： 蒋玉龙|茹国平|陆 昉等|
同期刊论文项目
多层薄膜固相反应与Co-Ni系硅化物薄膜外延及应用研究
期刊论文 15 会议论文 3
同项目期刊论文
Ni/Pd/Si固相反应及NiSi热稳定性增强研究
Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction
Co/C/Si(100)结构固相外延生长CoSi2
Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi2薄膜
The reaction characteristics of ultra thin Ni film on undoped and doped Si (100)
Nickel silicidation on n and p-type junctions at 300oC
Thermal stability, phase and interface uniformity of Ni-Silicide formed by Ni-Si solid-state reactio
Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si (100)
Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure
Schottky barrier characteristics of ternary silicide Co1-xNixSi2 on n-Si(100) contacts formed by sol
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
Ramp rate dependence of NiSi formation studied by the silicided Schottky contact
Nickel silicide formation on shallow junctions
Ti中间层对超薄Ni膜硅化反应特性的影响