采用阳极氧化方法和MBE生长技术进行了非均匀阱宽InGaAs/A1GaAs多量子阱超辐射发光管器件的设计和工艺制作,研究了三种条形结构器件的功率输出和光谱输出特性。在150mA的驱动电流条件下获得了10mW以上的超辐射光输出,光谱宽度约为18nm.
InGaAs/AlGaAs non-uniform well-thickness multi-quantum well superluminescent diodes were designed and successfully fabricated, the output properties of light power and spectrum were measured and analyzed. An output power higher than 10 mW with spectrum width about 18 nm was obtained under driving current less than 150 mA.