中文摘要：

提出了一种新的激光器腔面钝化方法。先用（NH4）2S溶液硫化解理后的激光器腔面，然后使用磁控溅射方法对激光器的前腔面镀ZnS钝化膜、后腔面镀Si／SiO2高反射膜。ZnS钝化层光学厚度为λ／4，在中心波长为808nm处透过率可达95．5％。钝化前激光器的光学灾变损伤（COD）阈值为1．6W，钝化后为2．0W，提高了25％倍；未镀膜的激光器阈值电流为0．25A，经硫化再镀ZnS后阈值电流为0．20A，降低了20％。实验结果表明，经硫化后溅射ZnS对激光器腔面具有良好的钝化和增透效果。

英文摘要：

A new passivation technology of semiconductor laser cavity surfaces is proposed, that is, the front cavity surfaces of laser chips that are sulfureted by （NH4）2 S are coated with ZnS film by magnetron sputtering,and the back cavity surfaces are sputtered by Si/SiO2 HR films. The optical thickness of ZnS passivation film is λ/4 ,whose transmissivity T is 95.5% at 808 nm wavelength. Laser catastrophic optical damage（COD） threshold is 1.6 W before passivation,and its COD threshold is 2.0 W after passivation,which is almost increased by 25%. Laser threshold current is 0. 25 A before passivation,and its threshold current is 0. 20 A after passivation. The results indicate that the ZnS passivation film sulfureted by （NH4）2 S takes on better passivation and antireflecting effect.