中文摘要：

为实现GaAs表面的钝化，以Na2S、（NH4）2S、CH3CSNH2为主要研究对象，通过对比实验研究得出较为理想的湿法钝化液。通过光致发光（PL）谱研究了（NH4）2S＋叔丁醇、CH3CSNH2＋NH4OH、CH3CSNH2＋叔丁醇三种不同含硫溶液钝化（100）GaAs表面后的发光特性。PL谱测试发现，（NH4）2S＋叔丁醇饱和溶液处理过的（100）GaAs表面光致发光强度最强，PL谱的相对发光强度是未做钝化处理的10倍左右。因此得出（NH4）2S＋叔丁醇饱和溶液是较为理想的（100）GaAs表面钝化液。

英文摘要：

The passivation of （100）GaAs surface was investigated by Na2S, （NH4 ）2S and CH3 CSNH2 solution to find optimal passivation methods. （NH4 ）2S ＋ t-C4HgOH, CH3CSNH2 ＋ NH4OH and CH3CSNH2 ＋ t-C4H9OH sulf-solutions have been used for passivation comparation of （100） GaAs surface by means of Ar^＋ laser excitated photoluminescence （PL）. The relative PL spectrum intensity of sample treated by （NH4 ）2S ＋ t-C4H9OH passivation is 10 times stronger than that of unpassivated samples. The results indicate that （NH4）2S ＋ t-C4HgOH solution has the better passivation effect on （100） GaAs surface.